Micron Technology, Inc., Qualifies 288 Megabit RLDRAM II Device; Micron supports networking and video imaging markets with RLDRAM II products
BOISE, Idaho—(BUSINESS WIRE)—Sept. 13, 2004—
Micron Technology, Inc., today announced qualification
of the 288 megabit (Mb) reduced latency DRAM II (RLDRAM(R) II)
products now available in volume production. RLDRAM II technology's
fast random access, extremely high bandwidth and high density are
optimal for high-performance networks, high-end commercial graphics,
and server (L3) cache applications.
"We are very excited about RLDRAM II technology, and believe that
RLDRAM II products will enable us to build higher performance and more
cost effective products for our most demanding customers," said
Pradeep Sindhu, Vice Chairman and Chief Technical Officer of Juniper
Networks. "Micron's RLDRAM II technology is our architecture of choice
for high-performance routing systems."
"Micron's RLDRAM II technology is approaching its one hundredth
design win with applications requiring high bandwidth memories,
DRAM-like densities, low latency, and fast internal cycle times," said
Achim Hill, Micron's Senior Director of Marketing for Networking and
Communication. "Realizing the overall system performance advantages
derived from RLDRAM technology, many of our customers choose RLDRAM II
technology as their high-performance memory. RLDRAM II product design
activity continues to grow further validating it as the
high-performance leader in the reduced latency technology market."
Micron's RLDRAM II technology provides the best possible
combination of bandwidth, low latency and reduced row cycle time (RC)
of 20 nanoseconds (ns), providing optimum bus utilization efficiency.
Additional advantages of the RLDRAM II technology feature set include;
on-die termination (ODT), multiplexed or non-multiplexed addressing,
on-chip delay lock loop (DLL), common and separate I/O, programmable
output impedance and a power efficient 1.8V core. These features offer
designers optimum flexibility, providing a memory solution designed to
fully optimize bus utilization whether the data bus is unidirectional
or has a balanced READ and WRITE ratio.
Micron Technology, Inc., is one of the world's leading providers
of advanced semiconductor solutions. Through its worldwide operations,
Micron manufactures and markets DRAMs, Flash memory, CMOS image
sensors, other semiconductor components and memory modules for use in
leading-edge computing, consumer, networking, and mobile products.
Micron's common stock is traded on the New York Stock Exchange (NYSE)
under the MU symbol. To learn more about Micron Technology, Inc.,
visit its web site at www.micron.com.
Micron and the Micron logo are trademarks of Micron Technology,
Inc. RLDRAM is a trademark of Infineon Technologies AG in various
countries, and is used by Micron Technology, Inc. under license from
Infineon. All other trademarks are the property of their respective
owners.
Contact:
Micron Technology, Inc.
Kim Snider, 208-368-3941
kcsnider@micron.com
www.micron.com
